Measurement of multiple patterning parameters
US9490182B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2014 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Dec 22, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.