Gate contact structure having gate contact layer
US9490317B1 · kind B1 · utility
21Cited by
16References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 2015 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | May 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is set forth herein a gate contact structure for a gate. The gate contact structure can include a first contact layer and a second contact layer. In one embodiment, a gate contact layer can define a contact that provides a gate tie down. In one embodiment, a gate contact layer can have a minimum width larger than a gate length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.