Multiple bit per cell dual-alloy GST memory elements
US9490426B2 · kind B2 · utility
3Cited by
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11Claims
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Key dates
| Filing date | Dec 5, 2014 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Dec 29, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In various embodiments, a memory cell for storing two or more bits of information includes two series-connected memory storage elements composed of programmable materials having different melting points, enabling independent programming of the storage elements via different current pulses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.