Polishing composition
US9493678B2 · kind B2 · utility
0Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Jan 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3213
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A polishing composition comprising abrasive particles, a compound having hexavalent molybdenum or pentavalent vanadium, an anionic additive, a halogen oxides compound or salts thereof, and a carrier solvent is provided herein. The polishing composition is suitable for chemical mechanical polishing process of SiGe, Si and SiO2 substrates. The compound having hexavalent molybdenum or pentavalent can effectively raise the removal rate for SiGe and Si substrates, and increase the polishing selectivity of SiGe and Si relative to SiO2, simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.