Adaptive multi-page programming methods and apparatus for non-volatile memory
US9496040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Jan 22, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5644
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for programming a memory cell connected to a selected word line in a memory device. The method includes performing one programming pass of a multi-pass programming operation for the memory cell, wherein a first set of program pulses is applied to the selected word line during the one programming pass, determining a number of the program pulses applied to the selected word line during the one programming pass, determining a difference between the determined number of program pulses applied to the selected word line during the one programming pass and a predetermined number of program pulses, adjusting a parameter of a second set of program pulses for the another programming pass based on the determined difference, and performing the another programming pass for the set of memory cells, wherein the second set of program pulses is applied to the selected word line during the another programming pass.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.