Semiconductor device and method for fabricating the same
US9496396B1 · kind B1 · utility
2Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Dec 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a gate structure on the substrate; (c) performing a first deposition process to form a first epitaxial layer adjacent to the gate structure and performing a first etching process to remove part of the first epitaxial layer at the same time; and (d) performing a second etching process to remove part of the first epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.