Back-illuminated sensor with boron layer
US9496425B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2013 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Aug 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.