Coplanar integration of a direct-bandgap chip into a silicon photonic device
US9496431B2 · kind B2 · utility
6Cited by
74References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2014 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Oct 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a composite device comprises providing a platform, providing a chip, and bonding the chip to the platform. The platform has a base layer and a device layer above the base layer. An opening in the device layer exposes a portion of the base layer. The chip is bonded to the portion of the base layer exposed by the opening in the device layer. A portion of the chip extends above the platform and is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.