Semiconductor devices and methods of fabricating the same
US9496488B2 · kind B2 · utility
9Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2013 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Nov 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are semiconductor devices and methods of fabricating the same. The semiconductor device may include lower wires, upper wires crossing the lower wires, select elements provided at intersections between the lower and upper wires, and memory elements provided between the select elements and the upper wires. Each of the memory elements may include a lower electrode having a top width greater than a bottom width, and a data storage layer including a plurality of magnetic layers stacked on a top surface of the lower electrode and having a rounded edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.