High density TiN RF/DC PVD deposition with stress tuning
US9499901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2013 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Oct 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for depositing a layer on a substrate are provided herein. In some embodiments, a method of depositing a metal-containing layer on a substrate in a physical vapor deposition (PVD) chamber may include applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying DC power to the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the potential on the substrate to be the same polarity as the ionized metal atoms to deposit a metal-containing layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.