RPS assisted RF plasma source for semiconductor processing
US9502218B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Jan 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.