Semiconductor device and method for fabricating the same
US9502259B2 · kind B2 · utility
2Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2014 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Nov 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; forming a cap layer on the fin-shaped structure; removing part of the cap layer on top of the fin-shaped structure; removing part of the fin-shaped structure; removing the remaining cap layer; and removing part of the remaining fin-shaped structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.