Method of semiconductor manufacture utilizing layer arrangement to improve autofocus
US9502282B2 · kind B2 · utility
0Cited by
4References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 30, 2014 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Dec 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76805
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device using high-NA ArF liquid immersion exposure of a photoresist, a layer arrangement is provided capable of increasing reflection of a reference beam in an oblique incidence autofocus optical system, thereby enhancing autofocus and making it possible to reduce variation in the diameter of a contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.