SOI lateral bipolar transistors having surrounding extrinsic base portions
US9502504B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2013 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Aug 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
Lateral SOI bipolar transistor structures are provided including an intrinsic base semiconductor material portion in which all surfaces of the intrinsic base not forming an interface with either a collector semiconductor material portion or an emitter semiconductor material portion, contain an extrinsic base semiconductor material portion. Each extrinsic base semiconductor material portion is of the same conductivity type as that of the intrinsic base semiconductor material portion, yet each extrinsic base semiconductor material portion has a higher dopant concentration than the intrinsic base semiconductor material portion. The intrinsic base semiconductor material portion of the lateral SOI bipolar transistors of the present application does not have any interface with surrounding insulator material layers. As such, any potential charge build-up in the surrounding insulator material layers is shielded by the extrinsic base semiconductor material portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.