Bulk acoustic wave (BAW) device having roughened bottom side
US9503047B2 · kind B2 · utility
6Cited by
4References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 21, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Apr 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/131
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 μm root mean square (RMS).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.