Integration of electromechanical and CMOS devices in front-end-of-line using replacement metal gate process flow
US9505611B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2015 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Jul 30, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0714
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Semiconductor devices and methods are provided for integrally forming electromechanical devices (e.g. MEMS or NEMS devices) with CMOS devices in a FEOL (front-end-of-line) structure as part of a replacement metal gate process flow. For example, a method includes forming an electromechanical device in a first device region of a substrate and forming a transistor device in a second device region of the substrate. The electromechanical device includes a sacrificial anchor structure and a sacrificial cantilever structure formed of a sacrificial material. The transistor device includes a sacrificial gate electrode structure formed of the sacrificial material. A replacement metal gate process is performed to replace the sacrificial gate electrode structure of the transistor device with a metallic gate electrode, and to replace the sacrificial anchor structure and the sacrificial cantilever structure with a metallic anchor structure and a metallic cantilever structure. A release process is performed to release the metallic cantilever structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.