Compositions and processes for photolithography
US9507260B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2009 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Apr 15, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
New photoresist compositions are provided that are useful for immersion lithography. In one preferred aspect, photoresist composition are provided that comprise: (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.