System, method and apparatus for RF power compensation in a plasma processing system
US9508529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2014 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Feb 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32926
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Plasma processing systems and methods including a plasma processing chamber and an RF transmission path. The plasma processing chamber including an electrostatic chuck. The RF transmission path including one or more RF generators, a match circuit coupled the RF generator and an RF feed coupling the match circuit to the electrostatic chuck. The system also includes an RF return path coupled between the plasma processing chamber and the RF generator. A plasma processing system controller is coupled to the plasma processing chamber and the RF transmission path. The controller includes recipe logic for at least one plasma processing recipe including multiple plasma processing settings and an RF power compensation logic for adjusting at least one of the plasma processing settings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.