Method of fabricating a semiconductor device and a semiconductor device fabricated by the method
US9508551B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2015 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Mar 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/41
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes stacking an etch target layer, a first mask layer, and a second mask layer on a first surface of a substrate. A plurality of first spacer lines are formed parallel to each other and a first spacer pad line on the second mask layer is formed. A third mask pad in contact with at least the first spacer pad line on the second mask layer is formed. The second mask layer and the first mask layer are etched to form one or more first mask lines, a first mask preliminary pad, and second mask patterns. Second spacer lines are respectively formed covering sidewalls of the first mask preliminary pad and the first mask lines. First mask pads are formed. The etch target layer is etched to form conductive lines and conductive pads connected to the conductive lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.