Sidewall image templates for directed self-assembly materials
US9508562B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2014 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Nov 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one example, a method includes forming a template having a plurality of elements above a process layer and forming spacers on sidewalls of the plurality of elements. Portions of the process layer are exposed between adjacent spacers. At least one of the plurality of elements is removed. A mask structure is formed from a directed self-assembly material over the exposed portions. The process layer is patterned using at least the mask structure as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.