InGaN ohmic source contacts for vertical power devices

US9508838B2 · kind B2 · utility

Assignee

• Avogy, Inc. · US

Inventors

• Linda Romano · Sunnyvale, US
• Andrew P. Edwards · San Jose, US
• Dave P. Bour · Cupertino, US
• Isik C. Kizilyalli · San Francisco, US

Key dates

• Filing date: Mar 13, 2015
• Grant date: Nov 29, 2016
• Expiry date: Mar 13, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/343

Abstract

A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region. The source includes a GaN-layer coupled to an InGaN layer. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.