Hybrid reference generation for ferroelectric random access memory
US9514797B1 · kind B1 · utility
19Cited by
12References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 10, 2016 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Jun 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus that includes a reference generating circuit configured to generate a reference signal for a non-volatile memory (NVM) device, the reference generating circuit including a first circuit comprising at least one metal-oxide-semiconductor capacitor, the first circuit generating a first signal component of the reference signal, and a second circuit comprising at least one ferroelectric capacitor, the second circuit generating a second signal component of the reference signal, in which the second signal component is temperature dependent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.