Verify scheme for ReRAM
US9514815B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2015 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Oct 7, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0073
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Circuitry coupled to a programmable element comprising metal oxide is configured to execute a program-verify operation including: an initial cycle of a program operation and a verify operation, and subsequent cycles. The initial cycle includes an initial instance of the program operation to establish a cell resistance of the programmable element, and an initial instance of the verify operation to determine whether the cell resistance of the memory cell is within the target resistance range. At least one of the subsequent cycles includes an additional pulse having a second polarity to the programmable element, and a subsequent instance of the verify operation. The first polarity of the initial program pulse and the second polarity of the additional pulse have opposite polarities. A subsequent instance of the program operation includes applying a subsequent program pulse having the first polarity to the programmable element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.