Inventor · Hsinchu, TW

Feng-Min Lee

82Patents
9h-index
21Co-inventors
74Inventor score

Filing activity: Aug 6, 2012 → Jan 24, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US10242737B1 Device structure for neuromorphic computing system Physics 33 Active
US9811689B1 Chip ID generation using physical unclonable function Physics 19 Active
US9455403B1 Semiconductor structure and method for manufacturing the same Electricity 19 Active
US10635398B2 Voltage sensing type of matrix multiplication method for neuromorphic computing system Physics 18 Active
US10719296B2 Sum-of-products accelerator array Electricity 17 Active
US9245925B1 RRAM process with metal protection layer Electricity 16 Active
US9691478B1 ReRAM array configuration for bipolar operation Physics 14 Active
US10957392B2 2D and 3D sum-of-products array for neuromorphic computing system Electricity 13 Active
US10103895B1 Method for physically unclonable function-identification generation and apparatus of the same Electricity 9 Active
US9853215B1 Resistance switching memory device and method of manufacturing the same Electricity 7 Active
US9583700B2 RRAM process with roughness tuning technology Electricity 6 Active
US8962466B2 Low temperature transition metal oxide for memory device Electricity 6 Active
US10482953B1 Multi-state memory device and method for adjusting memory state characteristics of the same Electricity 6 Active
US9425391B1 Damascene process of RRAM top electrodes Electricity 5 Active
US9959928B1 Iterative method and apparatus to program a programmable resistance memory element using stabilizing pulses Physics 5 Active
US9859336B1 Semiconductor device including a memory cell structure Electricity 5 Active
US9852791B1 Semiconductor memory device, chip ID generation method thereof and manufacturing method thereof Electricity 4 Active
US9514815B1 Verify scheme for ReRAM Physics 3 Active
US10157963B1 Semiconductor device with memory structure Electricity 3 Active
US11664070B2 In-memory computation device and in-memory computation method to perform multiplication operation in memory cell array according to bit orders Physics 3 Active
US9515258B2 Memory structure and manufacturing method of the same Electricity 3 Active
US11748062B2 Multiplication and addition operation device and control method for multiplication and addition operation thereof Emerging Cross-Sectional Technologies 2 Active
US9947398B1 Semiconductor memory device and operation method thereof Physics 2 Active
US11562229B2 Convolution accelerator using in-memory computation Physics 2 Active
US9196361B2 Memory structure and operation method therefor Physics 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.