Control of ion angular distribution of ion beams with hidden deflection electrode
US9514912B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2014 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Jul 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30472
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A processing apparatus may include: an extraction plate disposed along a side of a plasma chamber, the extraction plate having a first and second aperture, and middle portion between the first and second aperture, the first and second aperture being configured to define a first and second ion beam when the plasma is present in the plasma chamber and an extraction voltage is applied between the extraction plate and a substrate; a hidden deflection electrode disposed adjacent the middle portion outside of the plasma chamber, and electrically isolated from the extraction plate; and a hidden deflection electrode power supply to apply a bias voltage to the hidden deflection electrode, wherein the bias voltage is configured to modify a mean angle of incidence of ions and/or a range of angles of incidence centered around the mean angle of incidence in the first and second ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.