Plasma pre-clean module and process
US9514927B2 · kind B2 · utility
450Cited by
65References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2016 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Mar 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.