Reducing or eliminating pre-amorphization in transistor manufacture

US9514940B2 · kind B2 · utility

Assignee

• Mie Fujitsu Semiconductor Limited · JP

Inventors

• Lance Scudder · Sunnyvale, US
• Pushkar Ranade · Los Gatos, US
• Charles Stager · Austin, US
• Urupattur C. Sridharan · San Jose, US
• Dalong Zhao · San Jose, US

Key dates

• Filing date: Jan 20, 2015
• Grant date: Dec 6, 2016
• Expiry date: Jan 20, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/601
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating field effect transistors using carbon doped silicon layers to substantially reduce the diffusion of a doped screen layer formed below a substantially undoped channel layer includes forming an in-situ epitaxial carbon doped silicon substrate that is doped to form the screen layer in the carbon doped silicon substrate and forming the substantially undoped silicon layer above the carbon doped silicon substrate. The method may include implanting carbon below the screen layer and forming a thin layer of in-situ epitaxial carbon doped silicon above the screen layer. The screen layer may be formed either in a silicon substrate layer or the carbon doped silicon substrate.