Patterning of a hard mask material
US9514955B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2015 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | May 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31056
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a substrate includes providing the substrate including a photoresist/bottom anti-reflection coating (PR/BARC) layer, a hard mask layer, a stop layer, a carbon layer and a stack including a plurality of layers. The method includes defining a hole pattern including a plurality of holes in the PR/BARC layer using photolithography; transferring the hole pattern into the carbon layer; filling the plurality of holes in the hole pattern with oxide to create oxide pillars; using a planarization technique to remove the hard mask layer, a remaining portion of the PR/BARC layer and the stop layer; stripping the carbon layer to expose the oxide pillars; filling space between the oxide pillars with hard a mask material including metal; planarizing at least part of the hard mask material; and stripping the oxide pillars to expose the hole pattern in the hard mask material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.