Unidirectional spacer in trench silicide

US9514992B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Emre Alptekin · Fishkill, US
• Sameer H. Jain · Beacon, US
• Unoh Kwon · Fishkill, US
• Zhengwen Li · Danbury, US
• Hari V. Mallela · Poughquag, US
• Ayse M. Ozbek · Malta, US
• Cung D. Tran · Newburgh, US
• Reinaldo Vega · Mahopac, US
• Richard S. Wise · Beacon, US

Key dates

• Filing date: May 7, 2015
• Grant date: Dec 6, 2016
• Expiry date: May 7, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

A semiconductor device includes a trench region in an interconnect level dielectric layer. A silicide layer is on the bottom of the trench region. Opposing minor sides of the trench region include a spacer layer, but the central portion of the trench region is substantially free from the spacer layer. The spacer layer is formed using an angled gas cluster ion beam.