Method for manufacturing semiconductor devices comprising epitaxial layers
US9514993B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2015 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Mar 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing semiconductor devices includes following steps. A substrate including a first gate structure and a second gate structure formed thereon is provided. The first gate structure and the second gate structure are complementary to each other. Next, a first mask layer covering the second gate structure is formed and followed by forming first recesses in the substrate at two respective sides of the first transistor. Then, forming the first recesses, a first epitaxial layer is formed in each first recess. After forming the first epitaxial layers, a local protecting cap is formed on the first epitaxial layers and followed by removing the first mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.