Over-mold plastic packaged wide band-gap power transistors and MMICS
US9515011B2 · kind B2 · utility
5Cited by
18References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2014 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Jul 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor package includes a lead frame, a wide band-gap transistor attached to the lead frame, and an over-mold surrounding the lead frame and the wide band-gap transistor. The wide band-gap transistor has a peak output power greater than 150 W when operated at a frequency up to 3.8 GHz. Using an over-mold along with a wide band-gap transistor in the transistor package allows the transistor package to achieve an exceptionally high efficiency, gain, and bandwidth, while keeping the manufacturing cost of the transistor package low.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.