Semiconductor device having an insulated gate bipolar transistor arrangement and a method for forming such a semiconductor device

US9515066B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Roman Baburske · Otterfing, DE

Key dates

• Filing date: Jun 30, 2015
• Grant date: Dec 6, 2016
• Expiry date: Jun 30, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/461

Abstract

A semiconductor device includes an insulated gate bipolar transistor (IGBT) arrangement. The IGBT arrangement includes a carrier confinement reduction region laterally arranged between a cell region and a sensitive region. The IGBT arrangement is configured or formed so that the cell region has a first average density of free charge carriers in an on-state of the IGBT arrangement, the carrier confinement reduction region has a second average density of free charge carriers in the on-state of the IGBT arrangement and the sensitive region has a third average density of free charge carriers in the on-state of the IGBT arrangement. The first average density of free charge carriers is larger than the second average density of free charge carriers and the second average density of free charge carriers is larger than the third average density of free charge carriers.