Vertical NAND and method of making thereof using sequential stack etching and landing pad

US9515080B2 · kind B2 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Akira Takahashi · Mitsuke, JP
• Chi-Ming Wang · Ann Arbor, US
• Johann Alsmeier · San Jose, US
• Henry Chien · San Jose, US
• Xiying Costa · San Jose, US

Key dates

• Filing date: Mar 12, 2014
• Grant date: Dec 6, 2016
• Expiry date: Apr 5, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/693

Abstract

A vertical NAND string device includes a semiconductor channel, where at least one end portion of the semiconductor channel extends substantially perpendicular to a major surface of a substrate, at least one semiconductor or electrically conductive landing pad embedded in the semiconductor channel, a tunnel dielectric located adjacent to the semiconductor channel, a charge storage region located adjacent to the tunnel dielectric, a blocking dielectric located adjacent to the charge storage region and a plurality of control gate electrodes extending substantially parallel to the major surface of the substrate.