Power semiconductor devices having superjunction structures with implanted sidewalls
US9515199B2 · kind B2 · utility
3Cited by
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20Claims
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Assignee
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Key dates
| Filing date | Jan 2, 2015 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Jan 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a drift region having an upper surface and a lower surface. A first contact is on the upper surface of the drift region and a second contact is on the lower surface of the drift region. The drift region includes a first semiconductor pillar that has a tapered sidewall and that is doped with first conductivity type impurities and a second semiconductor pillar on the tapered sidewall of the first semiconductor pillar, the second semiconductor pillar doped with second conductivity type impurities that have an opposite conductivity from the first conductivity type impurities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.