Low degradation MRAM encapsulation process using silicon-rich silicon nitride film
US9515252B1 · kind B1 · utility
9Cited by
2References
20Claims
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Key dates
| Filing date | Dec 29, 2015 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Dec 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of making a magnetic random access memory (MRAM) device comprising forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a first reference layer, a free layer, and a first tunnel barrier layer; and depositing an encapsulating silicon nitride film on and along sidewalls of the magnetic tunnel junction; wherein the silicon nitride film has a N:Si ratio from 0.1 to 1. An MRAM device made by the above method is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.