Pattern critical dimension measurement equipment and method for measuring pattern critical dimension
US9520266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2014 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Jul 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Pattern critical dimension measurement equipment includes an electron source configured to generate a primary electron beam, a deflector configured to deflect the primary electron beam emitted from the electron source, a focusing lens configured to focus the primary electron beam deflected by the deflector, a decelerator configured to decelerate the primary electron beam that irradiates the sample, a first detector located between the electron source and the focusing lens, the first detector being configured to detect electrons at part of azimuths of electrons generated from the sample upon irradiation of the sample with the primary electron beam, and a second detector located between the electron source and the first detector, the second detector being configured to detect electrons at substantially all azimuths of the electrons generated from the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.