Direct current superposition curing for resist reflow temperature enhancement
US9520270B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2014 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Jul 25, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques herein include methods for curing a layer of material (such as a resist) on a substrate to enable relatively greater heat reflow resistance. Increasing reflow resistance enables successful directed self-assembly of block copolymers. Techniques include receiving a substrate having a patterned photoresist layer and positioning this substrate in a processing chamber of a capacitively coupled plasma system. The patterned photoresist layer is treated with a flux of electrons by coupling negative polarity direct current power to a top electrode of the plasma processing system during plasma processing. The flux of electrons is accelerated from the top electrode with sufficient energy to pass through a plasma and its sheath, and strike the substrate such that the patterned photoresist layer changes in physical properties, which can include an increased glass-liquid transition temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.