Methods for controlling Fin recess loading
US9520302B2 · kind B2 · utility
1Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2015 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Nov 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate includes depositing an oxide material on a substrate having a first region, a second region and a plurality of features, wherein the first region has a high feature density and the second region has a low feature density; and controlling a ratio of an etch rate of the oxide material in the first region to an etch rate of the oxide material in the second region by forming an ammonium hexafluorosilicate ((NH4)2SiF6) layer having a first thickness atop the oxide material in the first region and having a second thickness atop the oxide material in the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.