Reverse conducting insulated gate bipolar transistor
US9520487B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2015 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Oct 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A semiconductor layer of a reverse conducting insulated gate bipolar transistor is provided with a barrier region of the first conductive type, wherein the barrier region is disposed in the body region and electrically connects to the emitter electrode via a pillar member which extends from the one of main surfaces of the semiconductor layer. The barrier region includes a first barrier partial region, wherein a distance between the first barrier partial region and the drift region is a first distance, and a second barrier partial region, wherein a distance between the second barrier partial region and the drift region is a second distance which is longer than the first distance. The second barrier partial region is in contact with a side surface of an insulated trench gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.