Process for deposition of titanium oxynitride for use in integrated circuit fabrication
US9523148B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2015 |
| Grant date | Dec 20, 2016 |
| Priority date | — |
| Expiry date | Aug 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.