Method for fabricating specific termination angles in titanium tungsten layers
US9524881B2 · kind B2 · utility
5Cited by
1References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2015 |
| Grant date | Dec 20, 2016 |
| Priority date | — |
| Expiry date | Apr 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.