Semiconductor structure and method for manufacturing the same
US9524923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2015 |
| Grant date | Dec 20, 2016 |
| Priority date | — |
| Expiry date | Mar 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54453
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a substrate, a through silicon via hole, an interlayer dielectric, a liner layer and a conductor. The through silicon via hole is formed in the substrate. The interlayer dielectric is formed on the substrate. The interlayer dielectric defines an opening corresponding to the through silicon via hole. The interlayer dielectric comprises a bird beak portion near the through silicon via hole. The liner layer is formed on a bottom and a sidewall of the through silicon via hole. The conductor is filled in the through silicon via hole and the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.