Semiconductor device and manufacturing method thereof
US9525001B2 · kind B2 · utility
7Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2015 |
| Grant date | Dec 20, 2016 |
| Priority date | — |
| Expiry date | Mar 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first substrate, a second substrate, a plurality of through vias (TVs), and a plurality of conductive caps. The first substrate has at least one electrical component disposed thereon. The second substrate is stacked on the first substrate. The TVs extend through the second substrate to be electrically connected to the at least one electrical component of the first substrate. The conductive caps respectively cover the TVs, and the conductive caps are electrically isolated from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.