Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer

US9525039B2 · kind B2 · utility

Assignee

• Avogy, Inc. · US

Inventors

• Isik C. Kizilyalli · San Francisco, US
• Dave P. Bour · Cupertino, US
• Thomas R. Prunty · Santa Clara, US
• Hui Nie · Cupertino, US
• Quentin Diduck · Santa Clara, US
• Ozgur Aktas · Santa Clara, US

Key dates

• Filing date: Sep 14, 2015
• Grant date: Dec 20, 2016
• Expiry date: Sep 14, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials includes providing an n-type GaN-based substrate having a first surface and a second surface. The method also includes forming an n-type GaN-based epitaxial layer coupled to the first surface of the n-type GaN-based substrate, and forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer. The method further includes removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources, and regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer, and p-type material in regions overlying the plurality of dopant sources. The method also includes forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer.