Channel-last replacement metal-gate vertical field effect transistor

US9525064B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Karthik Balakrishnan · Houston, US
• Kangguo Cheng · Schenectady, US
• Pouya Hashemi · White Plains, US
• Alexander Reznicek · Troy, US

Key dates

• Filing date: Dec 16, 2015
• Grant date: Dec 20, 2016
• Expiry date: Dec 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/667

Abstract

A method of making a vertical transistor includes forming a doped source on a substrate; depositing a sacrificial gate material on the source; forming a trench in the sacrificial gate material to expose the doped source; growing an epitaxial layer within the trench to form a channel region extending from the doped source and through the sacrificial gate material; performing an epitaxial growth process to grow an epitaxial layer on a portion of the channel region to form a drain over the sacrificial gate material; depositing a dielectric material on the drain to form a spacer that protects the epitaxial growth; and removing the sacrificial gate material and replacing the sacrificial gate material with a gate stack that surrounds the channel region between the doped source and the drain.