Patent · US Active

Semiconductor device and method of forming microelectromechanical systems (MEMS) package

US9527723B2 · kind B2 · utility

20Cited by
8References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 10, 2015
Grant dateDec 27, 2016
Priority date
Expiry dateMar 10, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device has a first semiconductor die and a modular interconnect structure adjacent to the first semiconductor die. An encapsulant is deposited over the first semiconductor die and modular interconnect structure as a reconstituted panel. An interconnect structure is formed over the first semiconductor die and modular interconnect structure. An active area of the first semiconductor die remains devoid of the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die. The reconstituted panel is singulated before or after mounting the second semiconductor die. The first or second semiconductor die includes a microelectromechanical system (MEMS). The second semiconductor die includes an encapsulant and an interconnect structure formed over the second semiconductor die. Alternatively, the second semiconductor die is mounted to an interposer disposed over the interconnect structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.