Resistive switching memory having a resistor, diode, and switch memory cell
US9530495B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Aug 5, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a semiconductor memory device includes a plurality of resistive switching memory cells, where each resistive switching memory cell can include: (i) a programmable impedance element having an anode and a cathode; (ii) an access transistor having a drain coupled to a bit line, a source coupled to the programmable impedance element cathode, and a gate coupled to a word line; (iii) a well having a first diffusion region configured as the source, a second diffusion region configured as the drain, and a third diffusion region configured as a well contact; and (iv) a diode having a cathode at the second diffusion region, and an anode at the third diffusion region, where the diode is turned on during an erase operation on the programmable impedance element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.