Patent · US Active

Select gate defect detection

US9530514B1 · kind B1 · utility

2Cited by

3References

20Claims

0Family size

Assignee

Sandisk Technologies, Inc. · US

Inventors

Jagdish Sabde · Fremont, US
Jayavel Pachamuthu · Milpitas, US
Sagar Magia · Milpitas, US

Key dates

Filing date	Jan 25, 2016
Grant date	Dec 27, 2016
Priority date	—
Expiry date	Jan 25, 2036

Classification

Technology area (CPC G)Physics
CPC primaryG11C2029/5002
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Detecting defects in select gates of memory cell strings is disclosed. An electrical short between adjacent select gates may be detected. The select gate may comprises a transistor having an adjustable threshold voltage. An operation configured to change a threshold voltage of one select transistor and to maintain a threshold voltage of an adjacent select transistor may be performed. The select transistors may be flagged in response to the threshold voltage of either select transistor failing to meet a target threshold voltage in response to the operation. The operation may be an erase operation or a program operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.