Read disturb detection in open blocks
US9530517B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | May 20, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage device with a memory may include read disturb detection for open blocks. An open or partially programmed block may develop read disturb errors from reading of the programmed portion of the open block. The detection of any read disturb effects may be necessary for continued programming of the open block and may include verifying that wordlines in the unprogrammed portion of the open block are in the erase state. A modified erase verify operation for the open block is used in which programmed wordlines are subject to a higher erase verify read voltage, while the unprogrammed wordlines are subject to an erase verify bias voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.