Method for measuring recombination lifetime of silicon substrate
US9530702B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 27, 2013 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Dec 27, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/56527
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided is a method of measuring a recombination lifetime of a silicon substrate, which is capable of evaluating metal contamination and crystal defects in a silicon substrate manufacturing process and a device manufacturing process with high accuracy. The method includes: measuring a recombination lifetime of a silicon substrate after subjecting a surface of the silicon substrate to chemical passivation processing; and performing ultraviolet protection processing of protecting at least the silicon substrate from ultraviolet rays during a period from the chemical passivation processing to a time when the measurement of the recombination lifetime is completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.